Few-layer black phosphorus field-effect transistors with reduced current fluctuation

ACS Nano

Volumn 8, Issue 11, 2014, Pages 11753-11762

  Na, Junhong ^a   Lee, Young Tack ^a   Lim, Jung Ah ^a   Hwang, Do Kyung ^a   Kim, Gyu Tae ^b   Choi, Won Kook ^a   Song, Yong Won ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

Al2o3; Black phosphorus; Low frequency noise; Passivation; Phosphorene

Indexed keywords

ALUMINA; ALUMINUM OXIDE; BLACK PHOSPHORUS; CHARGE TRAPPING; GATE DIELECTRICS; NOISE ABATEMENT; PASSIVATION; PHOSPHORUS; SCHOTTKY BARRIER DIODES; SPURIOUS SIGNAL NOISE;

AL2O3; CARRIER NUMBER FLUCTUATION; CHARGE TRAPPING/DETRAPPING; DEVICE CHARACTERISTICS; INTERFACE TRAP DENSITY; LOW-FREQUENCY NOISE; PHOSPHORENE; TRANSPORT CHARACTERISTICS;

FIELD EFFECT TRANSISTORS;

EID: 84912559444     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5052376     Document Type: Article

References (67)

1. Geim, A. K.; Novoselov, K. S. The Rise of Graphene. Nat. Mater. 2007, 6, 183-191.
2. Balandin, A. A. Low-Frequency 1/f Noise in Graphene Devices. Nat. Nanotechnol. 2013, 8, 549-555.
3. Yang, H.; Heo, J.; Park, S.; Song, H. J.; Seo, D. H.; Byun, K.-E.; Kim, P.; Yoo, I.; Chung, H.-J.; Kim, K. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier. Science 2012, 336, 1140-1143.
4. Jung, Y.; Shen, J.; Cha, J. Surface Effects on Electronic Transport of 2D Chalcogenide Thin Films and Nanostructures. Nano Convergence 2014, 1, 18-28.
5. 2 Transistors with Scandium Contacts. Nano Lett. 2012, 13, 100-105.
6. 2 Transistors. Nat. Nanotechnol. 2011, 6, 147-150.
7. 2 Monolayers and Device Applications. ACS Nano 2013, 8, 923-930.
8. 2 p-FETs with Chemically Doped Contacts. Nano Lett. 2012, 12, 3788-3792.
9. Baugher, B. W. H.; Churchill, H. O. H.; Yang, Y.; Jarillo-Herrero, P. Optoelectronic Devices Based on Electrically Tunable p-n Diodes in a Monolayer Dichalcogenide. Nat. Nanotechnol. 2014, 9, 262-267.
10. 2 Field-Effect Transistors on Parylene-C Substrate. ACS Nano 2014, 8, 5079-5088.
11. 2 Films. Adv. Funct. Mater. 2013, 23, 5511-5517.
12. 2 Transistors and Their Applications in Logic Circuits. Adv. Mater. 2014, 26, 3263-3269.
13. Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L.-J.; Loh, K. P.; Zhang, H. The Chemistry of Two-Dimensional Layered Transition Metal Dichalcogenide Nanosheets. Nat. Chem. 2013, 5, 263-275.
14. Editorial. Graphene Is Not Alone. Nat. Nanotechnol. 2012, 7, 683-683.
15. Schwierz, F. Graphene Transistors: Status, Prospects, and Problems. Proc. IEEE 2013, 101, 1567-1584.
16. 2 Transistors. Nat. Nanotechnol. 2013, 8, 146-147.
17. 2 Transistors'. Nat. Nanotechnol. 2013, 8, 147-148.
18. 2 Transistors. ACS Nano 2014, 8, 4023-4032.
19. 2 Rectifying Diodes Formed by Plasma-Assisted Doping. Appl. Phys. Lett. 2013, 103, 142110-4.
20. x Contacts. Nano Lett. 2014, 14, 1337-1342.
21. 2 Interfaces. Nano Lett. 2014, 14, 1714-1720.
22. Fang, H.; Tosun, M.; Seol, G.; Chang, T. C.; Takei, K.; Guo, J.; Javey, A. Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium. Nano Lett. 2013, 13, 1991-1995.
23. 2 Field-Effect Transistors: Reduction in Sheet and Contact Resistances. IEEE Electron Device Lett. 2013, 34, 1328-1330.
24. 2 by Benzyl Viologen. J. Am. Chem. Soc. 2014, 136, 7853-7856.
25. 2 Field-Effect Transistors: Substrate and Dielectric Effects. Appl. Phys. Lett. 2013, 102, 042104-4.
26. 2 Crystals. Nat. Commun. 2012, 3, 1011-1017.
27. 2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures. ACS Nano 2013, 7, 7931-7936.
28. 2 on Crystalline Hexagonal Boron Nitride Substrates. Nanoscale 2013, 5, 9572-9576.
29. Li, L.; Yu, Y.; Ye, G. J.; Ge, Q.; Ou, X.; Wu, H.; Feng, D.; Chen, X. H.; Zhang, Y. Black Phosphorus Field-Effect Transistors. Nat. Nanotechnol. 2014, 9, 372-377.
30. Koenig, S. P.; Doganov, R. a.; Schmidt, H.; Castro Neto, A. H.; Özyilmaz, B. Electric Field Effect in Ultrathin Black Phosphorus. Appl. Phys. Lett. 2014, 104, 103106-4.
31. Liu, H.; Neal, A. T.; Zhu, Z.; Luo, Z.; Xu, X.; Tománek, D.; Ye, P. D. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility. ACS Nano 2014, 8, 4033-4041.
32. Ghibaudo, G.; Roux, O.; Nguyen-Duc, C.; Balestra, F.; Brini, J. Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors. Phys. Status Solidi A 1991, 124, 571-581.
33. Ghibaudo, G.; Boutchacha, T. Electrical Noise and RTS Fluctuations in Advanced CMOS Devices. Microelectron. Reliab. 2002, 42, 573-582.
34. von Haartman, M.; Östling, M. Low-Frequency Noise in Advanced MOS Devices; Springer: Berlin, 2007.
35. Morita, A. Semiconducting Black Phosphorus. Appl. Phys. A: Mater. Sci. Process. 1986, 39, 227-242.
36. Qiao, J.; Kong, X.; Hu, Z.-X.; Yang, F.; Ji, W. High-Mobility Transport Anisotropy and Linear Dichroism in Few-Layer Black Phosphorus. Nat. Commun. 2014, 5, 4475.
37. 2. Phys. Status Solidi RRL 2013, 7, 268-273.
38. 2 Field-Effect Transistors. Appl. Phys. Lett. 2014, 104, 233502-5.
39. 2 Field Effect Transistors. ACS Nano 2012, 6, 5635-5641.
40. Park, W.; Park, J.; Jang, J.; Lee, H.; Jeong, H.; Cho, K.; Hong, S.; Lee, T. Oxygen Environmental and Passivation Effects on Molybdenum Disulfide Field Effect Transistors. Nanotechnology 2013, 24, 095202-5.
41. 2 Nano flakes by Functional Self-Assembled Monolayers. ACS Nano 2013, 7, 7795-7804.
42. Hong, T.; Chamlagain, B.; Lin, W.; Chuang, H.-J.; Pan, M.; zhou, z.; Xu, Y. Polarized Photocurrent Response in Black Phosphorus Field-Effect Transistors. Nanoscale 2014, 6, 8978-8983.
43. Sze, S. M.; Ng, K. K. Physics of Semiconductor Devices; Wiley: New York, 2006.
44. Chan, J.; Venugopal, A.; Pirkle, A.; McDonnell, S.; Hinojos, D.; Magnuson, C. W.; Ruoff, R. S.; Colombo, L.; Wallace, R. M.; Vogel, E. M. Reducing Extrinsic Performance-Limiting Factors in Graphene Grown by Chemical Vapor Deposition. ACS Nano 2012, 6, 3224-3229.
45. 2-Supported Graphene Devices. Nano Lett. 2011, 11, 767-771.
46. Kumar, K.; Kim, Y.-S.; Yang, E.-H. The Influence of Thermal Annealing to Remove Polymeric Residue on the Electronic Doping and Morphological Characteristics of Graphene. Carbon 2013, 65, 35-45.
47. Woo, Y.; Duesberg, G. S.; Roth, S. Reduced Contact Resistance between an Individual Single-Walled Carbon Nanotube and a Metal Electrode by a Local Point Annealing. Nanotechnology 2007, 18, 095203-7.
48. Jeong, O. L.; Park, C.; Ju-Jin, K.; Jinhee, K.; Jong Wan, P.; Kyung-Hwa, Y. Formation of Low-Resistance Ohmic Contacts between Carbon Nanotube and Metal Electrodes by a Rapid Thermal Annealing Method. J. Phys. D: Appl. Phys. 2000, 33, 1953-1956.
49. Zhuravlev, L. T. The Surface Chemistry of Amorphous Silica. Zhuravlev Model. Colloids Surf., A 2000, 173, 1-38.
50. 3:Zn Nanowire Field-Effect Transistor and Its Application as a Nonvolatile Memory Device. Appl. Phys. Lett. 2008, 93, 183111-3.
51. Jin, S. H.; Islam, A. E.; Kim, T.-i.; Kim, J.-h.; Alam, M. A.; Rogers, J. A. Sources of Hysteresis in Carbon Nanotube Field-Effect Transistors and Their Elimination Via Methylsiloxane Encapsulants and Optimized Growth Procedures. Adv. Funct. Mater. 2012, 22, 2276-2284.
52. Wang, H.; Wu, Y.; Cong, C.; Shang, J.; Yu, T. Hysteresis of Electronic Transport in Graphene Transistors. ACS Nano 2010, 4, 7221-7228.
53. 3 for Sensor Applications. Nanotechnology 2009, 20, 434010-10.
54. Won Lee, S.; Suh, D.; Young Lee, S.; Hee Lee, Y. Passivation Effect on Gate-Bias Stress Instability of Carbon Nanotube Thin Film Transistors. Appl. Phys. Lett. 2014, 104, 163506-4.
55. Grigoras, K.; Zavodchikova, M. Y.; Nasibulin, A. G.; Kauppinen, E. I.; Ermolov, V.; Franssila, S. Atomic Layer Deposition of Aluminum Oxide Films for Carbon Nanotube Network Transistor Passivation. J. Nanosci. Nanotechnol. 2011, 11, 8818-8825.
56. Liu, H.; Neal, A. T.; Si, M. W.; Du, Y. C.; Ye, P. D. The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights. IEEE Electron Device Lett. 2014, 35, 795-797.
57. 2 Gate Stacks. J. Appl. Phys. 2005, 98, 113706-9.
58. 2. Appl. Phys. Lett. 2013, 103, 113505-3.
59. Shin, B.; Weber, J. R.; Long, R. D.; Hurley, P. K.; Walle, C. G. V. d.; McIntyre, P. C. Origin and Passivation of Fixed Charge in Atomic Layer Deposited Aluminum Oxide Gate Insulators on Chemically Treated InGaAs Substrates. Appl. Phys. Lett. 2010, 96, 152908-3.
60. 2 Devices. Nanotechnology 2014, 25, 155702-7.
61. Tsung-Hsien, K.; San-Lein, W.; Kai-Shiang, T.; Yean-Kuen, F.; Chien-Ming, L.; Chia-Wei, H.; Yi-Wen, C.; Osbert, C.; Shoou-Jinn, C. Trap Properties of High-k/Metal Gate pMOSFETs with Aluminum Ion Implantation by Random Telegraph Noise and 1/f Noise Measurements. Jpn. J. Appl. Phys. 2014, 53, 04EC14-4.
62. Christensson, S.; Lundström, I.; Svensson, C. Low Frequency Noise in MOS Transistors - I Theory. Solid-State Electron. 1968, 11, 797-812.
63. Rolland, A.; Richard, J.; Kleider, J. P.; Mencaraglia, D. Electrical Properties of Amorphous Silicon Transistors and MIS-Devices: Comparative Study of Top Nitride and Bottom Nitride Configurations. J. Electrochem. Soc. 1993, 140, 3679-3683.
64. Knoch, J.; Zhang, M.; Appenzeller, J.; Mantl, S. Physics of Ultrathin-Body Silicon-on-Insulator Schottky-Barrier Field-Effect Transistors. Appl. Phys. A: Mater. Sci. Process. 2007, 87, 351-357.
65. Heinzig, A.; Slesazeck, S.; Kreupl, F.; Mikolajick, T.; Weber, W. M. Reconfigurable Silicon Nanowire Transistors. Nano Lett. 2011, 12, 119-124.
66. Andres, C.-G.; Leonardo, V.; Elsa, P.; Joshua, O. I.; Narasimha-Acharya, K. L.; Sofya, I. B.; Dirk, J. G.; Michele, B.; Gary, A. S.; Alvarez, J. V.; et al. Isolation and Characterization of Few-Layer Black Phosphorus. 2D Mater. 2014, 1, 025001-19.
67. Joo, M.-K.; Kang, P.; Kim, Y.; Kim, G.-T.; Kim, S. A Dual Analyzer for Real-Time Impedance and Noise Spectroscopy of Nanoscale Devices. Rev. Sci. Instrum. 2011, 82, 034702-5.