Separation of interlayer resistance in multilayer MoS2 field-effect transistors

Applied Physics Letters

Volumn 104, Issue 23, 2014, Pages

  Na, Junhong ^a   Shin, Minju ^a,b   Joo, Min Kyu ^a,b   Huh, Junghwan ^c   Jeong Kim, Yun ^a   Jong Choi, Hyung ^a   Hyung Shim, Joon ^a   Kim, Gyu Tae ^a  

^a Korea University   (South Korea)

^b IMEP LAHC   (France)

^c NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; MOLYBDENUM COMPOUNDS; MULTILAYERS; SCHOTTKY BARRIER DIODES;

FOUR-PROBE MEASUREMENT; GATE VOLTAGES; GATED FOUR-PROBE MEASUREMENTS; MOLYBDENUM DISULFIDE; RESISTANCE CHANGE; SCHOTTKY BARRIERS; SOURCE/DRAIN ELECTRODES; SOURCE/DRAIN SERIES RESISTANCES;

PROBES;

EID: 84902519245     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4878839     Document Type: Article

References (29)

1. W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, J. Joo, and S. Kim, Adv. Mater. 24, 5832 (2012). 10.1002/adma.201201909
2. S. Kim, A. Konar, W. S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. B. Yoo, J. Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, and K. Kim, Nature Commun. 3, 1011 (2012). 10.1038/ncomms2018
3. H. S. Lee, S.-W. Min, Y.-G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, and S. Im, Nano Lett. 12, 3695 (2012). 10.1021/nl301485q
4. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, Nat. Nanotechnol. 7, 699 (2012). 10.1038/nnano.2012.193
5. S. W. Han, H. Kwon, S. K. Kim, S. Ryu, W. S. Yun, D. H. Kim, J. H. Hwang, J. S. Kang, J. Baik, H. J. Shin, and S. C. Hong, Phys. Rev. B 84, 045409 (2011). 10.1103/PhysRevB.84.045409
6. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147 (2011). 10.1038/nnano.2010.279
7. S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, Nano Lett. 13, 100 (2013). 10.1021/nl303583v
8. S.-L. Li, K. Wakabayashi, Y. Xu, S. Nakaharai, K. Komatsu, W.-W. Li, Y.-F. Lin, A. Aparecido-Ferreira, and K. Tsukagoshi, Nano Lett. 13, 3546 (2013). 10.1021/nl4010783
9. R. Fivaz and E. Mooser, Phys. Rev. 163, 743 (1967). 10.1103/PhysRev.163. 743
10. M. S. Fuhrer and J. Hone, Nat. Nanotechnol. 8, 146 (2013). 10.1038/nnano.2013.30
11. B. Radisavljevic and A. Kis, Nat. Nanotechnol. 8, 147 (2013). 10.1038/nnano.2013.31
12. B. Radisavljevic and A. Kis, Nature Mater. 12, 815 (2013). 10.1038/nmat3687
13. M. Fontana, T. Deppe, A. K. Boyd, M. Rinzan, A. Y. Liu, M. Paranjape, and P. Barbara, Sci. Rep. 3, 1634 (2013). 10.1038/srep01634
14. W. Liu, J. Kang, D. Sarkar, Y. Khatami, D. Jena, and K. Banerjee, Nano Lett. 13, 1983 (2013). 10.1021/nl304777e
15. S. Das and J. Appenzeller, Nano Lett. 13, 3396 (2013). 10.1021/nl401831u
16. J. Na, M.-K. Joo, M. Shin, J. Huh, J.-S. Kim, M. Piao, J. E. Jin, H.-K. Jang, H. J. Choi, J. H. Shim, and G. T. Kim, Nanoscale 6, 433 (2014). 10.1039/c3nr04218a
17. L. Han and P. D. Ye, IEEE Electron Device Lett. 33, 546 (2012). 10.1109/LED.2012.2184520
18. H. Liu, A. T. Neal, and P. D. Ye, ACS Nano 6, 8563 (2012). 10.1021/nn303513c
19. A. Heinzig, T. Mikolajick, J. Trommer, D. Grimm, and W. M. Weber, Nano Lett. 13, 4176 (2013). 10.1021/nl401826u
20. G. Ghibaudo, Electron. Lett. 24, 543 (1988). 10.1049/el:19880369
21. F. Balestra, Nanoscale CMOS innovative materials, modeling, and characterization. (ISTE: Wiley, London, UK; Hoboken, NJ, 2010).
22. M.-K. Joo, J. Huh, M. Mouis, S. J. Park, D.-Y. Jeon, D. Jang, J.-H. Lee, G.-T. Kim, and G. Ghibaudo, Appl. Phys. Lett. 102, 053114 (2013). 10.1063/1.4788708
23. H.-Y. Chang, W. Zhu, and D. Akinwande, Appl. Phys. Lett. 104, 113504 (2014). 10.1063/1.4868536
24. 2 devices.
25. S. Das and J. Appenzeller, Phys. Status Solidi (RRL) 7, 268 (2013). 10.1002/pssr.201307015
26. M. R. Esmaeili-Rad and S. Salahuddin, Sci. Rep. 3, 2345 (2013). 10.1038/srep02345
27. J. Yoon, W. Park, G.-Y. Bae, Y. Kim, H. S. Jang, Y. Hyun, S. K. Lim, Y. H. Kahng, W.-K. Hong, B. H. Lee, and H. C. Ko, Small 9, 3295 (2013). 10.1002/smll.201300134
28. S.-W. Min, H. S. Lee, H. J. Choi, M. K. Park, T. Nam, H. Kim, S. Ryu, and S. Im, Nanoscale 5, 548 (2013). 10.1039/c2nr33443g
29. K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Express 2, 025003 (2009). 10.1143/APEX.2.025003