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Applied Physics Letters

Volumn 104, Issue 16, 2014, Pages

Passivation effect on gate-bias stress instability of carbon nanotube thin film transistors

(4) Lee, Sang Won a Suh, Dongseok a Lee, Si Young a,b Lee, Young Hee a,b

a Sungkyunkwan University (South Korea)

b Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; ELECTRONICS INDUSTRY; GAS ADSORPTION; HAFNIUM OXIDES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

GATE BIAS POLARITY; GATE-BIAS STRESS; PASSIVATION EFFECT; PASSIVATION LAYER; POSITIVE GATE BIAS; SOFT ELECTRONICS; STABILITY TESTS; THRESHOLD VOLTAGE SHIFTS;

PASSIVATION;

EID: 84900334991 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4873316 Document Type: Article

Times cited : (24)

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