Erratum: Mobility improvement and temperature dependence in MoSe 2 field-effect transistors on parylene-C substrate (ACS Nano (2014) 8 (5079-5088). DOI: 10.1021/nn501150r);Mobility improvement and temperature dependence in MoSe 2 field-effect transistors on parylene-C substrate

ACS Nano

Volumn 8, Issue 5, 2014, Pages 5079-5088

  Chamlagain, Bhim ^a   Li, Qing ^b   Ghimire, Nirmal Jeevi ^b,c   Chuang, Hsun Jen ^a   Perera, Meeghage Madusanka ^a   Tu, Honggen ^d   Xu, Yong ^d   Pan, Minghu ^b   Xaio, Di ^e   Yan, Jiaqiang ^b,c   Mandrus, David ^b,c   Zhou, Zhixian ^a  

^a WAYNE STATE UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c University of Tennessee   (United States)

^d Wayne State University   (United States)

^e CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

field effect transistor; mobility; surface phonon scattering

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; CRYSTAL IMPURITIES; ELECTRIC FIELD EFFECTS; FIELD EFFECT TRANSISTORS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; MOLYBDENUM COMPOUNDS; PHONON SCATTERING; PHONONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICA; SUBSTRATES; SURFACE ROUGHNESS; SURFACE SCATTERING; TEMPERATURE DISTRIBUTION;

ELECTRICAL CHARACTERIZATION; LOW-TEMPERATURE SCANNING TUNNELING MICROSCOPY; POLAR OPTICAL PHONON SCATTERING; ROOM TEMPERATURE MOBILITY; SURFACE PHONON; SURFACE ROUGHNESS SCATTERING; TEMPERATURE DEPENDENCE; TRANSPORT MEASUREMENTS;

SELENIUM COMPOUNDS;

EID: 84901684243     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn503807d     Document Type: Erratum

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