The effect of dielectric capping on few-layer phosphorene transistors: Tuning the schottky barrier heights

IEEE Electron Device Letters

Volumn 35, Issue 7, 2014, Pages 795-797

  Liu, Han ^a   Neal, Adam T ^a   Si, Mengwei ^a   Du, Yuchen ^a   Ye, Peide D ^a  

^a Purdue University   (United States)

Author keywords

atomic layer deposition; field effect transistors; Phosphorene; Schottky barrier heights

Indexed keywords

DEPOSITION; FIELD EFFECT TRANSISTORS; SEMICONDUCTOR METAL BOUNDARIES; TRANSISTORS;

ALD DIELECTRIC; DIELECTRIC CAPPING; ELECTRONS AND HOLES; ELEMENTAL SEMICONDUCTORS; METAL CONTACTS; PHOSPHORENE; SCHOTTKY BARRIER HEIGHTS; TWO-DIMENSIONAL LAYERED STRUCTURES;

ATOMIC LAYER DEPOSITION;

EID: 84903576344     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2014.2323951     Document Type: Article

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