Isolation and characterization of few-layer black phosphorus

2D Materials

Volumn 1, Issue 2, 2014, Pages

  Castellanos Gomez, Andres ^a   Vicarelli, Leonardo ^a   Prada, Elsa ^b   Island, Joshua O ^a   Narasimha Acharya, K L ^b   Blanter, Sofya I ^a   Groenendijk, Dirk J ^a   Buscema, Michele ^a   Steele, Gary A ^a   Alvarez, J V ^b   Zandbergen, Henny W ^a   Palacios, J J ^b   Van Der Zant, Herre S J ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b INSTITUTO NICOLÁS CABRERA   (Spain)

Author keywords

Band Structure; Black Phosphorus; Density Functional Theory; Exciton; Field Effect Transistor; Mechanical Exfoliation; Transmission Electron Microscopy

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; COMPUTATION THEORY; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; EXCITONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PHOSPHORUS; RAMAN SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

COMPUTATIONAL RESULTS; EFFECTIVE MASS APPROXIMATION; ENVIRONMENTAL STABILITY; EXCITON-BINDING ENERGY; ISOLATION AND CHARACTERIZATION; MECHANICAL EXFOLIATION; STRUCTURAL AND ELECTRONIC PROPERTIES; THICKNESS DEPENDENCE;

FIELD EFFECT TRANSISTORS;

EID: 84940198557     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/1/2/025001     Document Type: Article

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