Hysteresis in single-layer MoS 2 field effect transistors

ACS Nano

Volumn 6, Issue 6, 2012, Pages 5635-5641

  Late, Dattatray J ^a   Liu, Bin ^a   Matte, H S S Ramakrishna ^b   Dravid, Vinayak P ^a   Rao, C N R ^b  

^a NORTHWESTERN UNIVERSITY   (United States)

^b NATIONAL CHEMICAL LABORATORY   (India)

Author keywords

field effect transistor; hysteresis; moisture; molybdenum disulfide; PECVD; photosensitivity; silicon nitride

Indexed keywords

AMBIENT ENVIRONMENT; DEVICE MOBILITIES; MOLYBDENUM DISULFIDE; SINGLE LAYER; TRANSIENT BEHAVIOR; TRANSISTOR STRUCTURE; ULTRA-THIN;

CHEMICAL VAPOR DEPOSITION; HYSTERESIS; LIGHT SENSITIVE MATERIALS; MOISTURE; MOLYBDENUM; MOLYBDENUM COMPOUNDS; PHOTOSENSITIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE;

FIELD EFFECT TRANSISTORS;

DISULFIDE; MOLYBDENUM; MOLYBDENUM DISULFIDE; NANOPARTICLE;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; NONLINEAR SYSTEM; SEMICONDUCTOR; ULTRASTRUCTURE;

DISULFIDES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MOLYBDENUM; NANOPARTICLES; NONLINEAR DYNAMICS; TRANSISTORS, ELECTRONIC;

EID: 84862875615     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn301572c     Document Type: Article

References (32)

1. Bostwick, A.; Ohta, T.; Seyller, T.; Horn, K.; Rotenberg, E. Quasiparticle Dynamics in Graphene Nat. Phys. 2007, 3, 36-40
2. Geim, A. K.; Novoselov, K. S. The Rise of Graphene Nat. Mater. 2007, 6, 183-191
3. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric Field Effect in Atomically Thin Carbon Films Science 2004, 306, 666-669
4. 2 Phototransistors ACS Nano 2012, 6, 74-80
5. Schwierz, F. NANOELECTRONICS Flat Transistors Get Off the Ground Nat. Nanotechnol. 2011, 6, 135-136
6. 2 Analogues of Graphene Angew. Chem., Int. Ed. 2010, 49, 4059-4062
7. 2: A New Direct-Gap Semiconductor Phys. Rev. Lett. 2010, 105, 136805
8. 2 Transistors Be? Nano Lett. 2011, 11, 3768-3773
9. Johari, P.; Shenoy, V. B. Tunable Dielectric Properties of Transition Metal Dichalcogenides ACS Nano 2011, 5, 5903-5908
10. Lee, K.; Kim, H. Y.; Lotya, M.; Coleman, J. N.; Kim, G. T.; Duesberg, G. S. Electrical Characteristics of Molybdenum Disulfide Flakes Produced by Liquid Exfoliation Adv. Mater. 2011, 23, 4178
11. 2 Field-Effect Transistors ACS Nano 2011, 5, 7707
12. 2 Substrate Small 2012, 8, 966
13. 3 as Top-Gate Dielectric IEEE Electron Device Lett. 2012, 33, 546
14. Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Two-Dimensional Atomic Crystals Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 10451-10453
15. 2/Si Substrates Adv. Funct. Mater. 2012, 22, 1894
16. 2 Mater. Res. Bull. 1986, 21, 457-461
17. 2 ACS Nano 2011, 5, 9934-9938
18. Gu, Y.; Kwak, E. S.; Lensch, J. L.; Allen, J. E.; Odom, T. W.; Lauhon, L. J. Near-Field Scanning Photocurrent Microscopy of a Nanowire Photodetector Appl. Phys. Lett. 2005, 87, 043111
19. Zhang, Z. Y.; Yao, K.; Liu, Y.; Jin, C. H.; Liang, X. L.; Chen, Q.; Peng, L. M. Quantitative Analysis of Current-Voltage Characteristics of Semiconducting Nanowires: Decoupling of Contact Effects Adv. Funct. Mater. 2007, 17, 2478-2489
20. Maeng, J.; Park, W.; Choe, M.; Jo, G.; Kahng, Y. H.; Lee, T. Transient Drain Current Characteristics of ZnO Nanowire Field Effect Transistors Appl. Phys. Lett. 2009, 95, 123101
21. Bradley, K.; Cumings, J.; Star, A.; Gabriel, J. C. P.; Gruner, G. Influence of Mobile Ions on Nanotube Based FET Devices Nano Lett. 2003, 3, 639-641
22. Kim, W.; Javey, A.; Vermesh, O.; Wang, O.; Li, Y. M.; Dai, H. J. Hysteresis Caused by Water Molecules in Carbon Nanotube Field-Effect Transistors Nano Lett. 2003, 3, 193-198
23. Wang, H. M.; Wu, Y. H.; Cong, C. X.; Shang, J. Z.; Yu, T. Hysteresis of Electronic Transport in Graphene Transistors ACS Nano 2010, 4, 7221-7228
24. 2 Interface Causing Hysteretic Device Characteristics Appl. Phys. Lett. 2011, 98, 183508
25. Holinski, R.; Gänsheimer, J. A Study of the Lubricating Mechanism of Molybdenum Disulfide Wear 1972, 19, 329-342
26. Zhuravlev, L. T. The Surface Chemistry of Amorphous Silica. Zhuravlev Model Colloids Surf., A 2000, 173, 1-38
27. Liu, H.; Xu, K.; Zhang, X.; Ye, P. D. The Integration of High-κ Dielectric on Two Dimensional Crystals by Atomic Layer Deposition Appl. Phys. Lett. 2012, 100, 152115
28. Chen, F.; Xia, J. L.; Ferry, D. K.; Tao, N. J. Dielectric Screening Enhanced Performance in Graphene FET Nano Lett. 2009, 9, 2571-2574
29. Hollander, M. J.; LaBella, M.; Hughes, Z. R.; Zhu, M.; Trumbull, K. A.; Cavalero, R.; Snyder, D. W.; Wang, X. J.; Hwang, E.; Datta, S.; Robinson, J. A. Enhanced Transport and Transistor Performance with Oxide Seeded High-κ Gate Dielectrics on Wafer-Scale Epitaxial Graphene Nano Lett. 2011, 11, 3601-3607
30. Zhu, W. J.; Neumayer, D.; Perebeinos, V.; Avouris, P. Silicon Nitride Gate Dielectrics and Band Gap Engineering in Graphene Layers Nano Lett. 2010, 10, 3572-3576
31. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150
32. Rinkio, M.; Johansson, A.; Paraoanu, G. S.; Torma, P. High-Speed Memory from Carbon Nanotube Field-Effect Transistors with High-κ Gate Dielectric Nano Lett. 2009, 9, 643-647