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Volumn 22, Issue 11, 2012, Pages 2276-2284

Sources of hysteresis in carbon nanotube field-effect transistors and their elimination via methylsiloxane encapsulants and optimized growth procedures

(6) Jin, Sung Hun a Islam, Ahmad E a Kim, Tae Il a Kim, Ji Hun a Alam, Muhammad A b Rogers, John A a,c

a University of Illinois at Urbana Champaign (United States)

b Purdue University (United States)

c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

Author keywords

carbon nanotubes; field effect transistors; hysteresis; spin on glass; sweep rates

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; ENCAPSULANTS; GATE VOLTAGES; METHYLSILOXANE; NANOTUBE GROWTH; SPIN ON GLASS; SWEEP RATES;

CARBON NANOTUBES; DEFECTS; FIELD EFFECT TRANSISTORS; NANOSENSORS;

HYSTERESIS;

EID: 84861831785 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201102814 Document Type: Article

Times cited : (106)

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