The unusual mechanism of partial fermi level pinning at metal-MoS 2 interfaces

Nano Letters

Volumn 14, Issue 4, 2014, Pages 1714-1720

  Gong, Cheng ^a   Colombo, Luigi ^b   Wallace, Robert M ^a   Cho, Kyeongjae ^a  

^a The University of Texas at Dallas   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

density functional theory (DFT); Fermi level pinning; metal contact; Schottky barrier; work function

Indexed keywords

CHEMICAL BONDS; DENSITY FUNCTIONAL THEORY; FERMI LEVEL; METALS; MOLYBDENUM; MOLYBDENUM COMPOUNDS; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; WORK FUNCTION;

CHARGE REDISTRIBUTION; FERMI LEVEL PINNING; INTERFACE BEHAVIOR; METAL CONTACTS; METAL-INDUCED GAP STATE; METAL-SEMICONDUCTOR JUNCTIONS; SCHOTTKY BARRIERS;

INTERFACE STATES;

EID: 84897999656     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl403465v     Document Type: Article

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