Oxygen environmental and passivation effects on molybdenum disulfide field effect transistors

Nanotechnology

Volumn 24, Issue 9, 2013, Pages

  Park, Woanseo ^a   Park, Juhun ^a   Jang, Jingon ^a   Lee, Hyungwoo ^a   Jeong, Hyunhak ^a   Cho, Kyungjune ^a   Hong, Seunghun ^a   Lee, Takhee ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORBED OXYGEN; ELECTRICAL CHARACTERISTIC; ELECTRONIC DEVICE; EXPOSED TO; FIELD EFFECT TRANSISTOR (FETS); MOLYBDENUM DISULFIDE; NITROGEN ENVIRONMENT; ON-CURRENTS; PASSIVATION EFFECT; PASSIVATION LAYER; POSITIVE GATE BIAS; SURFACE PASSIVATION;

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; MOLYBDENUM; MOLYBDENUM COMPOUNDS; NITROGEN; PASSIVATION; POLYMETHYL METHACRYLATES;

OXYGEN;

EID: 84874031441     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/9/095202     Document Type: Article

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