Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping

Applied Physics Letters

Volumn 103, Issue 14, 2013, Pages

  Chen, Mikai ^a   Nam, Hongsuk ^a   Wi, Sungjin ^a   Ji, Lian ^b   Ren, Xin ^b   Bian, Lifeng ^b   Lu, Shulong ^b   Liang, Xiaogan ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; LAYERED SEMICONDUCTORS; PLASMA APPLICATIONS; PLASMA STABILITY; SEMICONDUCTOR JUNCTIONS;

CURRENT RATIOS; LONG TERM STABILITY; NANOELECTRONIC DEVICES; PLASMA TREATMENT; RECTIFYING CHARACTERISTICS; SPECTROSCOPIC CHARACTERIZATION; TWO-DIMENSIONAL MATERIALS; X-RAY PHOTOELECTRONS;

MOLYBDENUM COMPOUNDS;

EID: 84885590708     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4824205     Document Type: Article

References (23)

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