Long term investigations of carbon nanotube transistors encapsulated by atomic-layer-deposited Al2O3 for sensor applications

Nanotechnology

Volumn 20, Issue 43, 2009, Pages

  Helbling, T ^a   Hierold, C ^a   Roman, C ^a   Durrer, L ^a   Mattmann, M ^a   Bright, V M ^b  

^a ETH ZURICH   (Switzerland)

^b UCB 450   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; A-THERMAL; ALUMINIUM OXIDE; AMBIENT AIR; ATOMIC LAYER DEPOSITED; CARBON NANOTUBE TRANSISTORS; DEVICE OPERATIONS; DIELECTRIC MEMBRANES; ENVIRONMENTAL CONDITIONS; ENVIRONMENTAL SENSITIVITIES; FLUCTUATING SIGNALS; FUNCTIONAL STRUCTURE; LONG TERM; NANOELECTRONIC SYSTEMS; ON STATE CURRENT; PIEZORESISTIVE TRANSDUCERS; SENSOR APPLICATIONS; SENSOR OPERATIONS; SENSOR RESEARCH; SINGLE-WALLED CARBON;

ALUMINUM; CARBON NANOTUBES; CRYSTAL RESONATORS; ELECTRONIC PROPERTIES; FIELD EFFECT TRANSISTORS; SENSORS; SINGLE-WALLED CARBON NANOTUBES (SWCN);

CURRENT VOLTAGE CHARACTERISTICS;

ALUMINUM OXIDE; CARBON NANOTUBE; SINGLE WALLED NANOTUBE;

AMBIENT AIR; ARTICLE; DEVICE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ENVIRONMENTAL FACTOR; FIELD EFFECT TRANSISTOR; HYSTERESIS; NANOENCAPSULATION; NOISE; PIEZOELECTRICITY; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; SENSOR; TRANSDUCER;

EID: 70349694244     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/43/434010     Document Type: Article

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