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Volumn 5, Issue 20, 2013, Pages 9572-9576

Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

(11) Chan, Mei Yin a Komatsu, Katsuyoshi a Li, Song Lin a Xu, Yong a Darmawan, Peter a Kuramochi, Hiromi a Nakaharai, Shu b Aparecido Ferreira, Alex a Watanabe, Kenji a Taniguchi, Takashi a Tsukagoshi, Kazuhito a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); INTERFACE TRAP DENSITY; ROOM TEMPERATURE MOBILITY; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; THERMALLY ACTIVATED;

BORON NITRIDE; CRYSTALLINE MATERIALS; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); MOLYBDENUM COMPOUNDS;

SUBSTRATES;

EID: 84884849918 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr03220e Document Type: Article

Times cited : (86)

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