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Applied Physics A: Materials Science and Processing

Volumn 87, Issue 3, 2007, Pages 351-357

Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

(4) Knoch, J a Zhang, M b Appenzeller, J c Mantl, S b

a IBM RESEARCH ZURICH (Switzerland)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

c IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); SILICON ON INSULATOR TECHNOLOGY; THICKNESS CONTROL;

DOPANT SEGREGATION; PHYSICAL MECHANISMS; SCHOTTKY BARRIERS;

MESFET DEVICES;

EID: 33947202136 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-007-3868-1 Document Type: Article

Times cited : (82)

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