Hysteresis in In2 O3 :Zn nanowire field-effect transistor and its application as a nonvolatile memory device

Applied Physics Letters

Volumn 93, Issue 18, 2008, Pages

  Zhang, Wenfeng ^a   Jie, Jiansheng ^a,b   Luo, Linbao ^a   Yuan, Guodong ^a   He, Zhubing ^a   Yao, Zhiqiang ^a   Chen, Zhenhua ^a   Lee, Chun Sing ^a   Zhang, Wenjun ^a   Lee, Shuit Tong ^a,c  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b HEFEI UNIVERSITY OF TECHNOLOGY   (China)

^c TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL STABILITY; HYSTERESIS; MOLECULES; NANOWIRES; NONVOLATILE STORAGE; PASSIVATION; SURFACE DEFECTS;

FABRICATED DEVICE; HIGH CHARGE STORAGE STABILITY; ITS APPLICATIONS; LARGE HYSTERESIS; NANOWIRE SURFACE; NON-VOLATILE MEMORY; NONVOLATILE MEMORY DEVICES; SURFACE PASSIVATION;

FIELD EFFECT TRANSISTORS;

EID: 55849100748     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2995985     Document Type: Article

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