Optimization of electron beam patterned hydrogen silsesquioxane mask edge roughness for low-loss silicon waveguides

Journal of Nanophotonics

Volumn 8, Issue 1, 2014, Pages

  Wood, Michael G ^a   Chen, Li ^a   Burr, Justin R ^a   Reano, Ronald M ^a  

^a The Ohio State University   (United States)

Author keywords

hydrogen silsesquioxane; line edge roughness; nanowaveguide fabrication; optical propagation loss; silicon photonics

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC LOSSES; ELECTRON BEAMS; HYDROGEN; LIGHT PROPAGATION; RAPID THERMAL ANNEALING; SILICON PHOTONICS; WAVEGUIDES;

CORRELATION LENGTHS; HYDROGEN SILSESQUIOXANE; LINE EDGE ROUGHNESS; OPTICAL PROPAGATION LOSS; PLANAR LIGHT-WAVE CIRCUITS; TETRAMETHYL AMMONIUM HYDROXIDE; TRANSVERSE ELECTRIC MODES; TRANSVERSE MAGNETIC;

ROUGHNESS MEASUREMENT;

EID: 84892175335     PISSN: None     EISSN: 19342608     Source Type: Journal    
DOI: 10.1117/1.JNP.8.083098     Document Type: Article

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