Nano-scale fluctuations in electron beam resist pattern evaluated by atomic force microscopy

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 419-422

  Nagase, M ^a   Namatsu, H ^a   Kurihara, K ^a   Iwadate, K ^a   Murase, K ^a   Makino, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON BEAMS; EVALUATION; FRACTALS; IMAGE ANALYSIS; MOLECULES; MORPHOLOGY; NANOTECHNOLOGY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SURFACES;

DYNAMIC FORCE MODE; ELECTRON BEAM RESIST PATTERN; NANO SCALE FLUCTUATIONS; RESIST FILM; SCALING ANALYSIS; STANDARD DEVIATION;

PHOTORESISTS;

EID: 0029732739     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00277-4     Document Type: Article

References (8)

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