Optimization of HSQ resist e-beam processing technique on GaAs material

Microelectronic Engineering

Volumn 75, Issue 2, 2004, Pages 177-182

  Lauvernier, Denis ^a   Vilcot, Jean Pierre ^a   François, Marc ^a   Decoster, Didier ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

Electron beam lithography; HSQ resist; III V semiconductors; KOH developer; Nano patterning

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; ELECTRON BEAM LITHOGRAPHY; OPTICAL WAVEGUIDES; OPTIMIZATION; POTASSIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS;

HSQ RESISTS; HYDROGEN SILESQUIOXANE (HSQ); III/V SEMICONDUCTORS; KOH DEVELOPERS; NANO-PATTERNING;

ELECTRON BEAMS;

EID: 3142757343     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.05.002     Document Type: Article

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