TMAH etching of silicon and the interaction of etching parameters

Sensors and Actuators, A: Physical

Volumn 63, Issue 3, 1997, Pages 243-249

  Thong, J T L ^a   Choi, W K ^a   Chong, C W ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Etching parameters; Silicon; Tetramethylammonium hydroxide (TMAH)

Indexed keywords

AMMONIUM COMPOUNDS; COMPOSITION EFFECTS; ETCHING; OXIDES; TEMPERATURE; WETTING;

FACTORIAL ANALYSIS METHOD; TETRAMETHYLAMMONIUM HYDROXIDE;

SEMICONDUCTING SILICON;

EID: 0031360544     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)80511-0     Document Type: Article

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