Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations

Microelectronic Engineering

Volumn 41-42, Issue , 1998, Pages 331-334

  Namatsu, H ^a   Yamaguchi, T ^a   Nagase, M ^a   Yamazaki, K ^a   Kurihara, K ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; LITHOGRAPHY; NANOTECHNOLOGY; POLYMERS;

LINEWIDTH FLUCTUATIONS REDUCTION;

PHOTORESISTS;

EID: 12844272449     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00076-8     Document Type: Article

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