Impact of line edge roughness on the resistivity of nanometer-scale interconnects

Microelectronic Engineering

Volumn 76, Issue 1-4, 2004, Pages 126-130

  Steinhogl W ^a   Schindler, G ^a   Steinlesberger, G ^a   Traving, M ^a   Engelhardt, M ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Copper metallization; Interconnects; Line edge roughness; Resistivity

Indexed keywords

ELECTRIC RESISTANCE; GEOMETRY; GRAIN BOUNDARIES; MATHEMATICAL MODELS; METALLIZING; NANOTECHNOLOGY; VLSI CIRCUITS;

COPPER METALLIZATION; DIFFUSE SCATTERING; LINE EDGE ROUGHNESS (LER); MEAN FREE PATH;

OPTICAL INTERCONNECTS;

EID: 4544247206     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.07.005     Document Type: Conference Paper

References (7)

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