Surface roughness of hydrogen silsesquioxane as a negative tone electron beam resist

Vacuum

Volumn 77, Issue 2, 2005, Pages 117-123

  Georgiev, Y M ^a   Henschel, W ^a,b   Fuchs, A ^a   Kurz, H ^a  

^a AMO GMBH   (Germany)

^b UNIVERSITY OF TÜBINGEN   (Germany)

Author keywords

Electron beam lithography; Electron beam resist; Hydrogen silsesquioxane (HSQ); Surface roughness

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; MICROELECTRONICS; NANOTECHNOLOGY; ORGANIC POLYMERS; SCANNING ELECTRON MICROSCOPY;

BAKING TEMPERATURE; ELECTRON BEAM EXPOSURE; ELECTRON BEAM RESISTS; HYDROGEN SILSESQUIOXANE (HSQ);

SURFACE ROUGHNESS;

EID: 10844292512     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.07.080     Document Type: Article

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