20 nm Line/space patterns in HSQ fabricated by EUV interference lithography

Microelectronic Engineering

Volumn 84, Issue 5-8, 2007, Pages 700-704

  Ekinci, Yasin ^a   Solak, Harun H ^a   Padeste, Celestino ^a   Gobrecht, Jens ^a   Stoykovich, Mark P ^b   Nealey, Paul F ^b  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b University of Wisconsin Madison   (United States)

Author keywords

Contrast; EUV lithography; High resolution; Hydrogen silsesquioxane (HSQ); Photoresist; Sensitivity

Indexed keywords

CONTRAST MEDIA; HYDROGEN; PARAFFINS; PHOTORESISTORS; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS;

HIGH RESOLUTION; HYDROGEN SILSESQUIOXANE (HSQ); INTERFERENCE LITHOGRAPHY;

EXTREME ULTRAVIOLET LITHOGRAPHY;

EID: 34247603100     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.01.213     Document Type: Article

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