From CD to 3D sidewall roughness analysis with 3D CD-AFM

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5752, Issue II, 2005, Pages 966-976

  Foucher, Johann ^a  

^a CEA GRENOBLE   (France)

Author keywords

Accuracy; AFM; CD; LER; LWR; Precision; Roughness; SEM

Indexed keywords

ETCHING; LITHOGRAPHY; MEASUREMENT THEORY; PARAMETER ESTIMATION;

ADVANCE PROCESS DEVELOPMENT; FRONT-END ETCHING; LINE EDGE ROUGHNESS (LER); LINE WIDTH ROUGHNESS (LWR);

ATOMIC FORCE MICROSCOPY;

EID: 24644506647     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.599229     Document Type: Conference Paper

References (5)

1. T.Linton and al, "Determination of the Line Edge Roughness Specification for 34nm Devices. IEDM 2002, pp.303-306".
2. th edition
3. A. Yamaguchi and al, "Metrology of LER: influence of line-edge roughness (LER) on transistor performance", Proc. SPIE 2004, Vol.5375, pp.468-476.
4. J.Foucher, K.Miller, "Study of 3D metrology techniques as an alternative to cross-sectional analysis at the R&D level", Proc SPIE 5375, pp.444-455 (2004)
5. Y. Martin and H.K. Wickramasinghe,"Method for imaging sidewalls by AFM", Appl. Phys. Lett, Vol 64, N19 (1994)