Effects of developing conditions on the contrast and sensitivity of hydrogen silsesquioxane

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 1119-1123

  Chen, Yifang ^a   Yang, Haifang ^b   Cui, Zheng ^a  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b INSTITUTE OF PHYSICS   (China)

Author keywords

Contrast; Electron beam lithography; Hot developing and developing condition; Hydrogen silsesquioxane (HSQ); Sensitivity

Indexed keywords

ASPECT RATIO; HYDROGEN; OPTICAL RESOLVING POWER; SENSITIVITY ANALYSIS; ULTRASONICS;

CONTRAST; HOT DEVELOPING AND DEVELOPING CONDITION; HYDROGEN SILSESQUIOXANE (HSQ);

ELECTRON BEAM LITHOGRAPHY;

EID: 33646032121     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.167     Document Type: Article

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