Fabrication of sub-10 nm silicon carbon nitride resonators using a hydrogen silsesquioxane mask patterned by electron beam lithography

Microelectronic Engineering

Volumn 88, Issue 8, 2011, Pages 2338-2341

  Mohammad, M A ^a   Dew, S K ^a   Evoy, S ^a,b   Stepanova, M ^a,b  

^a UNIVERSITY OF ALBERTA   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Doubly Clamped Cantilevers; Electron Beam Lithography; HSQ; Hydrogen Silsesquioxane; Nanomechanical Resonators; Silicon Carbon Nitride; Sub 10 nm

Indexed keywords

DOUBLY CLAMPED CANTILEVERS; HSQ; HYDROGEN SILSESQUIOXANE; NANOMECHANICAL RESONATORS; SILICON CARBON NITRIDE; SUB-10 NM;

CARBON NITRIDE; ELECTRON BEAMS; ELECTRON OPTICS; FABRICATION; HYDROGEN; RESONATORS;

ELECTRON BEAM LITHOGRAPHY;

EID: 79960074847     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.11.045     Document Type: Conference Paper

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