Hydrogen silsesquioxane for direct electron-beam patterning of step and flash imprint lithography templates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 2896-2901

  Mancini, D P ^a   Gehoski, K A ^a   Ainley, E ^a   Nordquist, K J ^a   Resnick, D J ^a   Bailey, T C ^b   Sreenivasan, S V ^b   Ekerdt, J G ^b   Willson, C G ^b  

^a MOTOROLA INC   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASSOCIATION REACTIONS; ELECTRON BEAM LITHOGRAPHY; ETCHING; INDIUM COMPOUNDS; OXIDES; SCANNING ELECTRON MICROSCOPY; SPIN COATING;

ELECTRON BEAM PATTERNING; HYDROGEN SILSESQUIOXANE; INDIUM TIN OXIDE; SPIN COATABLE OXIDE; STEP AND FLASH IMPRINT LITHOGRAPHY;

ORGANIC COMPOUNDS;

EID: 0036883178     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1515311     Document Type: Article

References (10)

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