Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Journal of Applied Physics

Volumn 113, Issue 6, 2013, Pages

  Perillat Merceroz, Guillaume ^a   Cosendey, Gatien ^a   Carlin, Jean François ^a   Butté, Raphaël ^a   Grandjean, Nicolas ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ATTRACTIVE SOLUTIONS; COMPRESSIVE STRAIN; CRITICAL THICKNESS; DEGRADATION MECHANISM; GAN SUBSTRATE; HIGH REFRACTIVE INDEX CONTRASTS; IN COMPOSITIONS; KINETIC ROUGHENING; LATTICE-MATCHED; LOW DENSITY; N LAYERS; STRUCTURAL DEGRADATION; SURFACTANT EFFECTS; THREADING DISLOCATION; ULTRAVIOLET LIGHT-EMITTING DIODES; V-DEFECTS;

COALESCENCE; DEGRADATION; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; REFRACTIVE INDEX; TENSILE STRAIN;

DEFECTS;

EID: 84874339380     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4790424     Document Type: Article

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