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Physica Status Solidi (B) Basic Research

Volumn 247, Issue 7, 2010, Pages 1740-1746

Al1-xInxN/GaN bilayers: Structure, morphology, and optical properties

(12) Lorenz, K a,b Magalhaes S a,c Franco, N a,b Barradas, N P a,b Darakchieva, V a,b Alves, E a,b Pereira, S c Correia, M R c Munnik, F d Martin, R W e O'Donnell, K P e Watson, I M e

a INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA (Portugal)

c UNIVERSITY OF AVEIRO (Portugal)

d INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

e UNIVERSITY OF STRATHCLYDE (United Kingdom)

Author keywords

III V semiconductors; Photoluminescence; Rutherford backscattering spectrometry; Surface structure

Indexed keywords

EID: 77954567521 PISSN: 03701972 EISSN: 15213951 Source Type: Journal
DOI: 10.1002/pssb.200983656 Document Type: Article

Times cited : (11)

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