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Volumn 107, Issue 3, 2010, Pages

Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH CONDITIONS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MISORIENTATION ANGLE; MOLE FRACTION; POLAR LAYERS; POLAR ORIENTATION; SMOOTH SURFACE; STEP BUNCHING; VICINAL SAPPHIRE;

EID: 76949096475     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3296127     Document Type: Article
Times cited : (30)

References (43)
  • 2
    • 0035506756 scopus 로고    scopus 로고
    • Power electronics on InAlN/(In)GaN: Prospect for a record performance
    • DOI 10.1109/55.962646, PII S0741310601094198
    • J. Kuzmk, IEEE Electron Device Lett. 0741-3106 22, 510 (2001). 10.1109/55.962646 (Pubitemid 33106085)
    • (2001) IEEE Electron Device Letters , vol.22 , Issue.11 , pp. 510-512
    • Kuzmik, J.1
  • 9
    • 21444458173 scopus 로고    scopus 로고
    • Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode
    • DOI 10.1063/1.1872197, 084505
    • J. Dorsaz, J. F. Carlin, S. Gradecak, and M. Ilegems, J. Appl. Phys. 0021-8979 97, 084505 (2005). 10.1063/1.1872197 (Pubitemid 40914273)
    • (2005) Journal of Applied Physics , vol.97 , Issue.8 , pp. 1-6
    • Dorsaz, J.1    Carlin, J.-F.2    Gradecak, S.3    Ilegems, M.4
  • 37
  • 38
    • 36849110552 scopus 로고
    • 0021-9606. 10.1063/1.1726787
    • G. Ehrlich and F. Hudda, J. Chem. Phys. 0021-9606 44, 1039 (1966). 10.1063/1.1726787
    • (1966) J. Chem. Phys. , vol.44 , pp. 1039
    • Ehrlich, G.1    Hudda, F.2
  • 43
    • 0014464613 scopus 로고
    • 0021-8979. 10.1063/1.1657442
    • R. L. Schwoebel, J. Appl. Phys. 0021-8979 40, 614 (1969). 10.1063/1.1657442
    • (1969) J. Appl. Phys. , vol.40 , pp. 614
    • Schwoebel, R.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.