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Volumn 83, Issue 19, 2011, Pages

Stress-modulated composition in the vicinity of dislocations in nearly lattice matched AlxIn1-xN/GaN heterostructures: A possible explanation of defect insensitivity

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EID: 79961113215     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.83.195309     Document Type: Article
Times cited : (29)

References (47)
  • 2
    • 0035392796 scopus 로고    scopus 로고
    • A two-dimensional optical fibre microphone array with matrix-style data readout
    • DOI 10.1088/0957-0233/12/7/319, Optical Fibre Sensors
    • S. Nakamura, S. Pearton, and G. Fasol, Meas. Sci. Technol. MSTCEP 0957-0233 10.1088/0957-0233/12/7/319 12, 755 (2001). (Pubitemid 32663512)
    • (2001) Measurement Science and Technology , vol.12 , Issue.7 , pp. 859-864
    • Nakamura, K.1    Toda, S.2    Yamanouchi, M.3
  • 3
    • 0032181962 scopus 로고    scopus 로고
    • JPAPBE 0022-3727 10.1088/0022-3727/31/20/001
    • O. Ambacher, J. Phys. D JPAPBE 0022-3727 10.1088/0022-3727/31/20/001 31, 2653 (1998).
    • (1998) J. Phys. D , vol.31 , pp. 2653
    • Ambacher, O.1
  • 6
    • 0041511972 scopus 로고    scopus 로고
    • APPLAB 0003-6951 10.1063/1.1596733
    • J.-F. Carlin and M. Ilegems, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1596733 83, 668 (2003).
    • (2003) Appl. Phys. Lett. , vol.83 , pp. 668
    • Carlin, J.-F.1    Ilegems, M.2
  • 10
    • 0032516703 scopus 로고    scopus 로고
    • SCIEAS 0036-8075 10.1126/science.281.5379.956
    • S. Nakamura, Science SCIEAS 0036-8075 10.1126/science.281.5379.956 281, 956 (1998).
    • (1998) Science , vol.281 , pp. 956
    • Nakamura, S.1
  • 14
    • 0000433335 scopus 로고
    • ACCRA9 0365-110X 10.1107/S0365110X51001690
    • F. C. Frank, Acta Crystallogr. ACCRA9 0365-110X 10.1107/S0365110X51001690 4, 497 (1951).
    • (1951) Acta Crystallogr. , vol.4 , pp. 497
    • Frank, F.C.1
  • 15
    • 0032555804 scopus 로고    scopus 로고
    • Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN films
    • DOI 10.1063/1.122229, PII S0003695198041382
    • I.-H. Kim, H.-S. Park, Y. Park, and T. Kim, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.122229 73, 1634 (1998). (Pubitemid 128671935)
    • (1998) Applied Physics Letters , vol.73 , Issue.12 , pp. 1634-1636
    • Kim, I.-H.1    Park, H.-S.2    Park, Y.-J.3    Kim, T.4
  • 18
    • 0035724392 scopus 로고    scopus 로고
    • Analysis of contacts and V-defects in GaN device structures by transmission electron microscopy
    • DOI 10.1093/jmicro/50.6.489
    • A. N. Bright, N. Sharma, and C. J. Humphreys, J. Electron. Microsc. JELJA7 0022-0744 10.1093/jmicro/50.6.489 50, 489 (2001). (Pubitemid 34215637)
    • (2001) Journal of Electron Microscopy , vol.50 , Issue.6 , pp. 489-495
    • Bright, A.N.1    Sharma, N.2    Humphreys, C.J.3
  • 24
    • 0000929676 scopus 로고
    • APPLAB 1364-5021 10.1098/rspa.1957.0133
    • J. Eshelby, Proc. R. Soc. London APPLAB 1364-5021 10.1098/rspa.1957.0133 241, 376 (1957).
    • (1957) Proc. R. Soc. London , vol.241 , pp. 376
    • Eshelby, J.1
  • 26
    • 25444495713 scopus 로고
    • AMETAR 0001-6160 10.1016/0001-6160(53)90099-6
    • J. Eshelby, W. Read, and W. Shockley, Acta Metall. AMETAR 0001-6160 10.1016/0001-6160(53)90099-6 1, 251 (1953).
    • (1953) Acta Metall. , vol.1 , pp. 251
    • Eshelby, J.1    Read, W.2    Shockley, W.3
  • 27
    • 79961112669 scopus 로고
    • (INSPEC, London
    • J. H. Edgar, (INSPEC, London, 1994).
    • (1994)
    • Edgar, J.H.1
  • 31
    • 0037519622 scopus 로고    scopus 로고
    • Quantitative measurement of displacement and strain fields from HREM micrographs
    • DOI 10.1016/S0304-3991(98)00035-7, PII S0304399198000357
    • M. J. Hÿtch, E. Snoeck, and R. Kilaas, Ultramicroscopy ULTRD6 0304-3991 10.1016/S0304-3991(98)00035-7 74, 131 (1998). (Pubitemid 28488647)
    • (1998) Ultramicroscopy , vol.74 , Issue.3 , pp. 131-146
    • Hytch, M.J.1    Snoeck, E.2    Kilaas, R.3
  • 32
    • 27744496180 scopus 로고    scopus 로고
    • Theoretical discussions on the geometrical phase analysis
    • DOI 10.1016/j.ultramic.2005.06.001, PII S0304399105001038
    • J. Rouvière and E. Sarigiannidou, Ultramicroscopy ULTRD6 0304-3991 10.1016/j.ultramic.2005.06.001 106, 1 (2005). (Pubitemid 41606274)
    • (2005) Ultramicroscopy , vol.106 , Issue.1 , pp. 1-17
    • Rouviere, J.L.1    Sarigiannidou, E.2
  • 33
  • 35
    • 0342758519 scopus 로고    scopus 로고
    • 3D dislocation dynamics: Stress-strain behavior and hardening mechanisms in fcc and bcc metals
    • DOI 10.1016/S0022-3115(99)00175-0
    • H. M. Zbib, T. D. de la Rubia, M. Rhee, and J. Hirth, J. Nucl. Mater. JNUMAM 0022-3115 10.1016/S0022-3115(99)00175-0 276, 154 (2000). (Pubitemid 30526675)
    • (2000) Journal of Nuclear Materials , vol.276 , Issue.1 , pp. 154-165
    • Zbib, H.M.1    Diaz De La Rubia, T.2    Rhee, M.3    P. Hirth, J.4
  • 36
    • 0016534234 scopus 로고
    • IEJQA7 0018-9197 10.1109/JQE.1975.1068634
    • P. Kirkby, IEEE J. Quantum Electron. IEJQA7 0018-9197 10.1109/JQE.1975.1068634 11, 562 (1975).
    • (1975) IEEE J. Quantum Electron. , vol.11 , pp. 562
    • Kirkby, P.1
  • 38
    • 0002055843 scopus 로고
    • APPLAB 0003-6951 10.1063/1.89580
    • S. M. Hu, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.89580 31, 53 (1977).
    • (1977) Appl. Phys. Lett. , vol.31 , pp. 53
    • Hu, S.M.1
  • 40
    • 0036508288 scopus 로고    scopus 로고
    • The dislocations of low-angle grain boundaries in GaN epilayers: A HRTEM quantitative study and finite element stress state calculation
    • DOI 10.1016/S0925-9635(02)00005-5, PII S0925963502000055, Proceedings of Diamond 2001, the 12th Conference on Diamond, Diamond-like materials, Carbon Nanotubes, Nitrides and Silicon Carbide
    • S. Kret, P. Dluzewski, G. Maciejewski, V. Potin, J. Chen, P. Ruterana, and G. Nouet, Diam. Relat. Mater. DRMTE3 0925-9635 10.1016/S0925-9635(02)00005-5 11, 910 (2002). (Pubitemid 34696373)
    • (2002) Diamond and Related Materials , vol.11 , Issue.3-6 , pp. 910-913
    • Kret, S.1    Dluzewski, P.2    Maciejewski, G.3    Potin, V.4    Chen, J.5    Ruterana, P.6    Nouet, G.7
  • 41
    • 5444247603 scopus 로고    scopus 로고
    • Measurement of the displacement field of dislocations to 0.03 A by electron microscopy
    • DOI 10.1038/nature01638
    • M. Hÿtch, J.-L. Putaux, and J.-M. Pénisson, Nature (London) 10.1038/nature01638 423, 270 (2003). (Pubitemid 40861686)
    • (2003) Nature , vol.423 , Issue.6937 , pp. 270-273
    • Hytch, M.J.1    Putaux, J.-L.2    Penisson, J.-M.3
  • 43
    • 77951806436 scopus 로고    scopus 로고
    • APPLAB 0003-6951 10.1063/1.3394007
    • H. Lei, J. Chen, and P. Ruterana, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3394007 96, 161901 (2010).
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 161901
    • Lei, H.1    Chen, J.2    Ruterana, P.3
  • 45
    • 27744497957 scopus 로고    scopus 로고
    • 1-xN/GaN epilayers grown on sapphire
    • DOI 10.1063/1.2108148, 084906
    • T. L. Song, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2108148 98, 084906 (2005). (Pubitemid 41605606)
    • (2005) Journal of Applied Physics , vol.98 , Issue.8 , pp. 1-9
    • Song, T.L.1


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