High conductive gate leakage current channels induced by in segregation around screw- and mixed-type threading dislocations in lattice-matched In x Al1-x N/GaN heterostructures

Applied Physics Letters

Volumn 97, Issue 23, 2010, Pages

  Song, J ^a   Xu, F J ^a   Yan, X D ^a   Lin, F ^a   Huang, C C ^a   You, L P ^a   Yu, T J ^a   Wang, X Q ^a   Shen, B ^a   Wei, K ^b   Liu, X Y ^b  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; CONDUCTIVE CHANNELS; CURRENT-VOLTAGE MEASUREMENTS; FORCE MICROSCOPY; GATE LEAKAGE CURRENT DENSITY; GATE-LEAKAGE CURRENT; HETEROSTRUCTURES; LATTICE-MATCHED; ORDERS OF MAGNITUDE; REVERSE-BIAS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; TEM; TEM OBSERVATIONS; THREADING DISLOCATION;

ALUMINUM; CRYSTALS; CURRENT DENSITY; GALLIUM; SCHOTTKY BARRIER DIODES; SCREW DISLOCATIONS; SCREWS; SEGREGATION (METALLOGRAPHY); TRANSMISSION ELECTRON MICROSCOPY;

LEAKAGE CURRENTS;

EID: 78650397507     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3525713     Document Type: Article

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