The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1-xN epitaxial layers

Journal of Crystal Growth

Volumn 311, Issue 13, 2009, Pages 3380-3385

  Sadler, T C ^a   Kappers, M J ^a   Oliver, R A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A1. Atomic force microscopy; A1. Surface structure; A3. Metal organic vapour phase epitaxy; B1. Nitrides; B2. Semiconducting indium compounds; B2. Semiconducting ternary compounds

Indexed keywords

A1. ATOMIC FORCE MICROSCOPY; A1. SURFACE STRUCTURE; A3. METAL-ORGANIC VAPOUR PHASE EPITAXY; B1. NITRIDES; B2. SEMICONDUCTING INDIUM COMPOUNDS; B2. SEMICONDUCTING TERNARY COMPOUNDS;

AMMONIA; ATOMIC FORCE MICROSCOPY; ATOMS; CRYSTAL GROWTH; DROP FORMATION; ELECTRON MOBILITY; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH TEMPERATURE; HIGH ELECTRON MOBILITY TRANSISTORS; MORPHOLOGY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; STRUCTURAL METALS; SURFACE MORPHOLOGY; TERNARY ALLOYS; TERNARY SYSTEMS; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 66649121072     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.04.004     Document Type: Article

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