205-GHz (Al,In)N/GaN HEMTs

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 957-959

  Sun, Haifeng ^a   Alt, Andreas R ^a   Benedickter, Hansruedi ^a   Feltin, Eric ^b   Carlin, Jean Franois ^b   Gonschorek, Marcus ^b   Grandjean, Nicolas R ^b   Bolognesi, C R ^a  

^a ETH ZURICH   (Switzerland)

^b EPFL   (Switzerland)

Author keywords

AlInN GaN; high electron mobility transistor (HEMT); millimeter wave transistors

Indexed keywords

ALGAN/GAN HEMTS; ALINN/GAN; CHANNEL VELOCITY; HIGH FIELD TRANSPORT; MAXIMUM CURRENT DENSITY; ROOM TEMPERATURE;

CUTOFF FREQUENCY; GALLIUM ALLOYS; GALLIUM NITRIDE; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; SEMICONDUCTING ALUMINUM COMPOUNDS; SWITCHING CIRCUITS; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77956173738     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2055826     Document Type: Article

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