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Volumn 353, Issue 1, 2012, Pages 108-114

Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (In xAl 1-x)N layers as a function of InN content, layer thickness and growth parameters

(8) Vennegues P a Diaby, B S a Kim Chauveau, H a Bodiou, L a Schenk, H P D a,b Frayssinet, E a Martin, R W c Watson, I M c

a CRHEA CNRS (France)

b Place Marcel Rebuffat (France)

c UNIVERSITY OF STRATHCLYDE (United Kingdom)

Author keywords

A1: Crystal morphology; A1: Defects; A3: Metalorganic chemical vapor deposition; B1: Nitrides; B2: Semiconducting indium compounds

Indexed keywords

CRYSTAL MORPHOLOGIES; GROWTH CONDITIONS; GROWTH PARAMETERS; LAYER THICKNESS; METAL-ORGANIC; THREADING DISLOCATION; V-DEFECTS; V/III RATIO; VAPOR PHASE;

DEFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; VAPORS;

EDGE DISLOCATIONS;

EID: 84861925348 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2012.05.004 Document Type: Article

Times cited : (19)

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