Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 1, 2012, Pages 25-28

  Pantzas, K ^a,b   Patriarche, G ^c   Orsal, G ^b,d   Gautier, S ^b,d   Moudakir, T ^b,e   Abid, M ^a,b   Gorge, V ^f   Djebbour, Z ^f   Voss, P L ^a,b   Ougazzaden, A ^a,b  

^a GEORGIA TECH LORRAINE   (France)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (France)

^c CNRS   (France)

^d SUPELEC   (France)

^e SUPELEC   (France)

^f UNIV PARIS SUD   (France)

Author keywords

EDX map; indium gallium nitride; lateral modulation of composition; MOVPE

Indexed keywords

DRIVING MECHANISM; INGAN ALLOY; LATERAL FLUCTUATIONS; MOVPE GROWTH; PSEUDOMORPHIC LAYERS; RELAXATION MECHANISM; SOLAR CELL MATERIALS;

GALLIUM NITRIDE; INDIUM; METALLORGANIC VAPOR PHASE EPITAXY;

GROWTH (MATERIALS);

EID: 84055177051     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201100154     Document Type: Article

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