The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy

Journal of Crystal Growth

Volumn 314, Issue 1, 2011, Pages 13-20

  Sadler, Thomas C ^a   Kappers, Menno J ^a   Oliver, Rachel A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A1. Atomic force microscopy; A1. Surface structure; A3. Metal organic vapour phase epitaxy; B1. Nitrides; B2. Semiconducting indium compounds; B2. Semiconducting ternary compounds

Indexed keywords

A1. ATOMIC FORCE MICROSCOPY; A1. SURFACE STRUCTURE; A3. METAL ORGANIC VAPOUR PHASE EPITAXY; B1. NITRIDES; B2. SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING TERNARY COMPOUNDS;

ATOMIC FORCE MICROSCOPY; ELECTRON MOBILITY; EPITAXIAL GROWTH; GROWTH RATE; HIGH ELECTRON MOBILITY TRANSISTORS; METALS; NITRIDES; ORGANOMETALLICS; POWER SPECTRAL DENSITY; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; SURFACE STRUCTURE; TERNARY ALLOYS; TERNARY SYSTEMS; VAPOR PHASE EPITAXY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 78651087326     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.108     Document Type: Article

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