Compositional instability in InAlN/GaN lattice-matched epitaxy

Applied Physics Letters

Volumn 100, Issue 9, 2012, Pages

  Wei, Q Y ^a   Li, T ^a   Huang, Y ^a   Huang, J Y ^a   Chen, Z T ^b   Egawa, T ^b   Ponce, F A ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONAL HOMOGENEITY; COMPOSITIONAL INSTABILITY; HETEROGENEOUS NUCLEATION AND GROWTH; INALN/GAN; INDIUM CONTENT; LATTICE-MATCHED; LATTICE-MATCHED EPITAXY; LUMINESCENCE PEAK; STRUCTURAL BREAKDOWN; THREADING DISLOCATION; UNDERLAYERS; V GROOVES;

GALLIUM NITRIDE; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCREW DISLOCATIONS; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL GROWTH;

EID: 84863275700     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3690890     Document Type: Article

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