Threading dislocation-governed degradation in crystal quality of heteroepitaxial materials: The case of InAlN nearly lattice-matched to GaN

Journal of Applied Physics

Volumn 111, Issue 5, 2012, Pages

  Chen, Z T ^a   Fujita, K ^a   Ichikawa, J ^a   Egawa, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITIES; GAN LAYERS; GROWTH EVOLUTION; HETEROEPITAXIAL; III-NITRIDES; LATTICE-MATCHED; LATTICE-MISMATCHED; MISFIT STRAINS; SUB-LAYERS; TEM OBSERVATIONS; THREADING DISLOCATION; TRANSMISSION ELECTRON MICROSCOPY (TEM);

CRYSTALLOGRAPHY; DEGRADATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SUPERCONDUCTING FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GALLIUM NITRIDE;

EID: 84858995916     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3693039     Document Type: Article

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