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Volumn 95, Issue 23, 2009, Pages

The origin and evolution of V-defects in Inx Al1-x N epilayers grown by metalorganic chemical vapor deposition

(11) Miao, Z L a Yu, T J a Xu, F J a Song, J a Huang, C C a Wang, X Q a Yang, Z J a Zhang, G Y a Zhang, X P a Yu, D P a Shen, B a

a PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

EPILAYERS GROWN; GAN TEMPLATE; LARGE STRAINS; LATTICE RELAXATION; LATTICE-MATCHED; METALORGANIC CHEMICAL VAPOR DEPOSITION; STACKING MISMATCH BOUNDARIES; THREADING DISLOCATION; V-DEFECTS;

DEFECTS; EPILAYERS; GALLIUM NITRIDE; LATTICE MISMATCH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM;

EID: 71949084034 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3272017 Document Type: Article

Times cited : (31)

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