Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Journal of Physics D: Applied Physics

Volumn 40, Issue 20, 2007, Pages 6328-6344

  Butte R ^a   Carlin, J F ^a   Feltin, E ^a   Gonschorek, M ^a   Nicolay, S ^a   Christmann, G ^a   Simeonov, D ^a   Castiglia, A ^a   Dorsaz, J ^a   Buehlmann, H J ^a   Christopoulos, S ^b   Baldassarri Hoger Von Hogersthal G ^b   Grundy, A J D ^b   Mosca, M ^a,d   Pinquier, C ^a,c   Py, M A ^a   Demangeot, F ^c   Frandon, J ^c   Lagoudakis, P G ^b   Baumberg, J J ^b   Grandjean, N ^a   more..

^a EPFL   (Switzerland)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^c UNIVERSITÉ DE TOULOUSE   (France)

^d UNIVERSITY OF PALERMO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL LATTICES; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LUMINESCENCE; PHOTONICS; SEMICONDUCTOR QUANTUM WELLS;

ELECTRON GAS SHEET CARRIER DENSITY; STRAIN-FREE STRUCTURES;

ALUMINUM COMPOUNDS;

EID: 36048993925     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/20/S16     Document Type: Article

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