Erratum: Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy (Applied Physics Letters (2009) 95 (071905))

Applied Physics Letters

Volumn 99, Issue 5, 2011, Pages

  Kehagias, Th ^a   Dimitrakopulos, G P ^a   Kioseoglou, J ^a   Kirmse, H ^b   Giesen, C ^c   Heuken, M ^c   Georgakilas, A ^d,e   Neumann, W ^b   Karakostas, Th ^a   Komninou, Ph ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b HUMBOLDT UNIVERSITY   (Germany)

^c AIXTRON AG   (Germany)

^d UNIVERSITY OF CRETE   (Greece)

^e INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80051597307     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3623430     Document Type: Erratum

References (1)

1. L. Zhou, M. R. McCartney, D. J. Smith, A. Mouti, E. Feltin, J. F. Carlin, and N. Grandjean, Appl. Phys. Lett. 97, 161902 (2010). 10.1063/1.3502483