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Applied Physics Letters

Volumn 101, Issue 8, 2012, Pages

Mg doping for p-type AlInN lattice-matched to GaN

(5) Taniyasu, Yoshitaka a,b Carlin, Jean Franois b Castiglia, Antonino b Butté, Raphaël b Grandjean, Nicolas b

a NTT Basic Research Laboratories (Japan)

b EPFL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; EMISSION INTENSITY; LATTICE-MATCHED; MG CONCENTRATIONS; MG-DOPING; P-TYPE; PIT DENSITY; SURFACE PITS;

LIGHT EMITTING DIODES; SURFACE DEFECTS;

GALLIUM NITRIDE;

EID: 84865474762 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4747524 Document Type: Article

Times cited : (43)

References (28)

1
- 0041511972
- 10.1063/1.1596733
- J.-F. Carlin and M. Ilegems, Appl. Phys. Lett. 83, 668 (2003). 10.1063/1.1596733
- (2003) Appl. Phys. Lett. , vol.83 , pp. 668
- Carlin, J.-F.¹ Ilegems, M.²

2
- 24944584123
- Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells
- DOI 10.1063/1.2045559, 111106
- S. Nicolay, J.-F. Carlin, E. Feltin, R. Butté, M. Mosca, N. Grandjean, M. Ilegems, M. Tchernycheva, L. Nevou, and F. H. Julien, Appl. Phys. Lett. 87, 111106 (2005). 10.1063/1.2045559 (Pubitemid 41330851)
- (2005) Applied Physics Letters , vol.87 , Issue.11 , pp. 1-3
- Nicolay, S.¹ Carlin, J.-F.² Feltin, E.³ Butt, R.⁴ Mosca, M.⁵ Grandjean, N.⁶ Ilegems, M.⁷ Tchernycheva, M.⁸ Nevou, L.⁹ Julien, F.H.¹⁰

3
- 13844281497
- Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers
- DOI 10.1049/el:20057334
- E. Feltin, R. Butté, J.-F. Carlin, J. Dorsaz, N. Grandjean, and M. Ilegems, Electron. Lett. 41, 94 (2005). 10.1049/el:20057334 (Pubitemid 40245866)
- (2005) Electronics Letters , vol.41 , Issue.2 , pp. 94-95
- Feltin, E.¹ Buttfe, R.² Carlin, J.-F.³ Dorsaz, J.⁴ Grandjean, N.⁵ Ilegems, M.⁶

4
- 67049134331
- 10.1063/1.3138136
- A. Castiglia, E. Feltin, G. Cosendey, A. Altoukhov, J.-F. Carlin, R. Butté, and N. Grandjean, Appl. Phys. Lett. 94, 193506 (2009). 10.1063/1.3138136
- (2009) Appl. Phys. Lett. , vol.94 , pp. 193506
- Castiglia, A.¹ Feltin, E.² Cosendey, G.³ Altoukhov, A.⁴ Carlin, J.-F.⁵ Butté, R.⁶ Grandjean, N.⁷

5
- 0942277742
- 10.1063/1.1633965
- J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, H. K. Jiang, P. Carrier, and S.-H. Wei, Appl. Phys. Lett. 83, 5163 (2003). 10.1063/1.1633965
- (2003) Appl. Phys. Lett. , vol.83 , pp. 5163
- Li, J.¹ Nam, K.B.² Nakarmi, M.L.³ Lin, J.Y.⁴ Jiang, H.K.⁵ Carrier, P.⁶ Wei, S.-H.⁷

6
- 79953732975
- 10.1063/1.3574025
- Y. Taniyasu and M. Kasu, Appl. Phys. Lett. 98, 131910 (2011). 10.1063/1.3574025
- (2011) Appl. Phys. Lett. , vol.98 , pp. 131910
- Taniyasu, Y.¹ Kasu, M.²

7
- 4244203187
- 10.1002/1521-3951(20020 2)229:33.0.CO;2-O
- V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmüller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, Phys. Status Solidi B 229, R1 (2002). 10.1002/1521-3951(200202)229:33.0.CO;2-O
- (2002) Phys. Status Solidi B , vol.229 , pp. 1
- Davydov, V.Yu.¹ Klochikhin, A.A.² Seisyan, R.P.³ Emtsev, V.V.⁴ Ivanov, S.V.⁵ Bechstedt, F.⁶ Furthmüller, J.⁷ Harima, H.⁸ Mudryi, A.V.⁹ Aderhold, J.¹⁰ Semchinova, O.¹¹ Graul, J.¹²

8
- 79956030105
- Unusual properties of the fundamental band gap of InN
- DOI 10.1063/1.1482786
- J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002). 10.1063/1.1482786 (Pubitemid 34638109)
- (2002) Applied Physics Letters , vol.80 , Issue.21 , pp. 3967
- Wu, J.¹ Walukiewicz, W.² Yu, K.M.³ Ager III, J.W.⁴ Haller, E.E.⁵ Lu, H.⁶ Schaff, W.J.⁷ Saito, Y.⁸ Nanishi, Y.⁹

9
- 84883188181
- 10.1143/JJAP.28.L2112
- H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 28, L2112 (1989). 10.1143/JJAP.28.L2112
- (1989) Jpn. J. Appl. Phys., Part 2 , vol.28 , pp. 2112
- Amano, H.¹ Kito, M.² Hiramatsu, K.³ Akasaki, I.⁴

10
- 0026867861
- 10.1143/JJAP.31.1258
- S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys., Part 1 31, 1258 (1992). 10.1143/JJAP.31.1258
- (1992) Jpn. J. Appl. Phys., Part 1 , vol.31 , pp. 1258
- Nakamura, S.¹ Iwasa, N.² Senoh, M.³ Mukai, T.⁴

11
- 33745627020
- An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
- DOI 10.1038/nature04760, PII NATURE04760
- Y. Taniyasu, M. Kasu, and T. Makimoto, Nature 441, 325 (2006). 10.1038/nature04760 (Pubitemid 44050193)
- (2006) Nature , vol.441 , Issue.7091 , pp. 325-328
- Taniyasu, Y.¹ Kasu, M.² Makimoto, T.³

12
- 33645527344
- 10.1103/PhysRevLett.96.125505
- R. E. Jones, K. M. Yu, S. X. Li, W. Walukiewicz, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. Lett. 96, 125505 (2006). 10.1103/PhysRevLett.96.125505
- (2006) Phys. Rev. Lett. , vol.96 , pp. 125505
- Jones, R.E.¹ Yu, K.M.² Li, S.X.³ Walukiewicz, W.⁴ Ager, J.W.⁵ Haller, E.E.⁶ Lu, H.⁷ Schaff, W.J.⁸

13
- 44849138172
- Improved light output of nitride-based light-emitting diodes by lattice-matched AlInN cladding structure
- DOI 10.1109/LPT.2008.922937
- A.-T. Cheng, Y.-K. Su, and W.-C. Lai, IEEE Photonics Technol. Lett. 20, 970 (2008). 10.1109/LPT.2008.922937 (Pubitemid 351796198)
- (2008) IEEE Photonics Technology Letters , vol.20 , Issue.12 , pp. 970-972
- Cheng, A.-T.¹ Su, Y.-K.² Lai, W.-C.³

14
- 77953587417
- 10.1063/1.3441373
- S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, Appl. Phys. Lett. 96, 221105 (2010). 10.1063/1.3441373
- (2010) Appl. Phys. Lett. , vol.96 , pp. 221105
- Choi, S.¹ Kim, H.J.² Kim, S.-S.³ Liu, J.⁴ Kim, J.⁵ Ryou, J.-H.⁶ Dupuis, R.D.⁷ Fischer, A.M.⁸ Ponce, F.A.⁹

15
- 0035506756
- Power electronics on InAlN/(In)GaN: Prospect for a record performance
- DOI 10.1109/55.962646, PII S0741310601094198
- J. Kuzmík, IEEE Electron Device Lett. 22, 510 (2001). 10.1109/55.962646 (Pubitemid 33106085)
- (2001) IEEE Electron Device Letters , vol.22 , Issue.11 , pp. 510-512
- Kuzmik, J.¹

16
- 0003685207
- edited by J. H. Edgar (INSPEC, London).
- Properties of Group III Nitrides, edited by, J. H. Edgar, (INSPEC, London, 1994).
- (1994) Properties of Group III Nitrides

17
- 0001495657
- 10.1063/1.366114
- A. F. Wright, J. Appl. Phys. 82, 2833 (1997). 10.1063/1.366114
- (1997) J. Appl. Phys. , vol.82 , pp. 2833
- Wright, A.F.¹

18
- 71949084034
- 10.1063/1.3272017
- Z. L. Miao, T. J. Yu, F. J. Xu, J. Song, C. C. Huang, X. Q. Wang, Z. J. Yang, G. Y. Zhang, X. P. Zhang, D. P. Yu, and B. Shen, Appl. Phys. Lett. 95, 231909 (2009). 10.1063/1.3272017
- (2009) Appl. Phys. Lett. , vol.95 , pp. 231909
- Miao, Z.L.¹ Yu, T.J.² Xu, F.J.³ Song, J.⁴ Huang, C.C.⁵ Wang, X.Q.⁶ Yang, Z.J.⁷ Zhang, G.Y.⁸ Zhang, X.P.⁹ Yu, D.P.¹⁰ Shen, B.¹¹

19
- 80051862643
- 10.1016/j.jcrysgro.2011.06.051
- T. C. Sadler, M. J. Kappers, and R. A. Oliver, J. Cryst. Growth 331, 4 (2011). 10.1016/j.jcrysgro.2011.06.051
- (2011) J. Cryst. Growth , vol.331 , pp. 4
- Sadler, T.C.¹ Kappers, M.J.² Oliver, R.A.³

20
- 0029727122
- J. Neugebauer and C. G. Van de Walle, Mater. Res. Soc. Symp. Proc. 395, 645 (1996).
- (1996) Mater. Res. Soc. Symp. Proc. , vol.395 , pp. 645
- Neugebauer, J.¹ Van De Walle, C.G.²

21
- 79959437699
- 10.1063/1.3593964
- A. Castiglia, J.-F. Carlin, and N. Grandjean, Appl. Phys. Lett. 98, 213505 (2011). 10.1063/1.3593964
- (2011) Appl. Phys. Lett. , vol.98 , pp. 213505
- Castiglia, A.¹ Carlin, J.-F.² Grandjean, N.³

22
- 79956049200
- Mg-rich precipitates in the p-type doping of InGaN-based laser diodes
- DOI 10.1063/1.1467704
- M. Hansen, L. F. Chen, S. H. Lim, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 80, 2469 (2002). 10.1063/1.1467704 (Pubitemid 34474308)
- (2002) Applied Physics Letters , vol.80 , Issue.14 , pp. 2469
- Hansen, M.¹ Chen, L.F.² Lim, S.H.³ DenBaars, S.P.⁴ Speck, J.S.⁵

23
- 27944510576
- Oxygen segregation to dislocations in GaN
- DOI 10.1063/1.2136224, 221903
- M. E. Hawkridge and D. Cherns, Appl. Phys. Lett. 87, 221903 (2005). 10.1063/1.2136224 (Pubitemid 41669214)
- (2005) Applied Physics Letters , vol.87 , Issue.22 , pp. 1-3
- Hawkridge, M.E.¹ Cherns, D.²

24
- 84863275700
- 10.1063/1.3690890
- Q. Y. Wei, T. Li, Y. Huang, J. Y. Huang, Z. T. Shen, T. Egawa, and F. A. Ponce, Appl. Phys. Lett. 100, 092101 (2012). 10.1063/1.3690890
- (2012) Appl. Phys. Lett. , vol.100 , pp. 092101
- Wei, Q.Y.¹ Li, T.² Huang, Y.³ Huang, J.Y.⁴ Shen, Z.T.⁵ Egawa, T.⁶ Ponce, F.A.⁷

25
- 0001345272
- 10.1103/PhysRevB.52.8132
- M. Suzuki, T. Uenoyama, and A. Yamase, Phys. Rev B 52, 8132 (1995). 10.1103/PhysRevB.52.8132
- (1995) Phys. Rev B , vol.52 , pp. 8132
- Suzuki, M.¹ Uenoyama, T.² Yamase, A.³

26
- 0001217620
- 10.1063/1.366847
- Y. C. Yeo, T. C. Chong, and M. F. Li, J. Appl. Phys. 83, 1429 (1998). 10.1063/1.366847
- (1998) J. Appl. Phys. , vol.83 , pp. 1429
- Yeo, Y.C.¹ Chong, T.C.² Li, M.F.³

27
- 36449008979
- 10.1063/1.356650
- V. W. L. Chin, T. L. Tansley, and T. Osotchan, J. Appl. Phys. 75, 7365 (1994). 10.1063/1.356650
- (1994) J. Appl. Phys. , vol.75 , pp. 7365
- Chin, V.W.L.¹ Tansley, T.L.² Osotchan, T.³

28
- 3442896012
- Nature of the 2.8 eV photoluminescence band in Mg doped GaN
- DOI 10.1063/1.120983, PII S000369519801211X
- U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, Appl. Phys. Lett. 72, 1326 (1998). 10.1063/1.120983 (Pubitemid 128671156)
- (1998) Applied Physics Letters , vol.72 , Issue.11 , pp. 1326-1328
- Kaufmann, U.¹ Kunzer, M.² Maier, M.³ Obloh, H.⁴ Ramakrishnan, A.⁵ Santic, B.⁶ Schlotter, P.⁷

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