Relaxation of compressively strained AlInN on GaN

Journal of Crystal Growth

Volumn 310, Issue 18, 2008, Pages 4058-4064

  Lorenz, K ^a   Franco, N ^a   Alves, E ^a   Pereira, S ^b   Watson, I M ^c   Martin, R W ^c   O'Donnell, K P ^c  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

^c UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

A1. Characterization; A1. Stresses; A3. Metal organic vapour phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B2. Semiconducting ternary compounds

Indexed keywords

GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OPTICAL ENGINEERING; SEMICONDUCTING GALLIUM; ZINC SULFIDE;

A1. CHARACTERIZATION; A1. STRESSES; A3. METAL ORGANIC VAPOUR PHASE EPITAXY; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS; B2. SEMICONDUCTING TERNARY COMPOUNDS; WURTZITE;

EPITAXIAL LAYERS;

EID: 49749100035     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.006     Document Type: Article

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