Growth study and impurity characterization of AlxIn 1-xN grown by metal organic chemical vapor deposition

Journal of Crystal Growth

Volumn 324, Issue 1, 2011, Pages 163-167

  Chung, Roy B ^a   Wu, Feng ^a   Shivaraman, Ravi ^a   Keller, Stacia ^a   Denbaars, Steven P ^a   Speck, James S ^a   Nakamura, Shuji ^a  

^a University of California   (United States)

Author keywords

A1. Characterization; A1. Impurities; A1. Surfaces; A3. Metal organic chemical vapor deposition; B1. Nitrides; B2. Semiconducting indium compounds

Indexed keywords

A1. CHARACTERIZATION; A1. IMPURITIES; A1. SURFACES; A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES; B2. SEMICONDUCTING INDIUM COMPOUNDS;

ALUMINUM; ATOMIC FORCE MICROSCOPY; CRYSTAL IMPURITIES; GALLIUM NITRIDE; INDIUM COMPOUNDS; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION;

VAPOR DEPOSITION;

EID: 79957854324     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.04.025     Document Type: Article

References (17)

1. S.Y. Karpov, N.I. Podolskaya, and I.A. Zhmakin Phys. Rev. B 70 2004 235203
2. J.-F. Carlin, C. Zellweger, J. Dorsaz, S. Nicolay, G. Christmann, E. Feltin, R. Butté, and N. Grandjean Phys. Status Solidi B 242 2005 2326
3. J. Carlin, and M. Ilegems Appl. Phys. Lett. 83 2003 668
4. E. Feltin, J.-F. Carlin, J. Dorsaz, G. Christmann, R. Butté, M. Laügt, M. Ilegems, and N. Grandjean Appl. Phys. Lett. 88 2006 051108
5. R. Butté, J.-F. Carlin, E. Feltin, M. Gonschorek, S. Nicolay, G. Christmann, D. Simeonov, A. Castiglia, J. Dorsaz, H.J. Buehlmann, S. Christopoulos, G.B.H.V. Hög, A.J.D. Grundy, M. Mosca, C. Pinquier, M.A. Py, F. Demangeot, J. Frandon, P.G. Lagoudakis, J.J. Baumberg, and N. Grandjean J. Phys. D: Appl. Phys. 40 2007 6328
6. C. Mauder, L.R. Khoshroo, M.V. Rzheutski, E.V. Lutsenko, G. Yablonskii, V.I. Kozlovsky, J. Woitok, Y. Dikme, M. Heuken, H. Kalisch, and R.H. Jansen Phys. Status Solidi C 5 2008 1553
7. C. Hums, J. Bläsing, A. Dadgar, A. Diez, T. Hempel, J. Christen, A. Krost, K. Lorenz, and E. Alves Appl. Phys. Lett. 90 2007 022105
8. T. Sadler, M. Kappers, and R. Oliver J. Cryst. Growth 311 2009 3380
9. D.F. Brown, S. Keller, T.E. Mates, J.S. Speck, S.P. DenBaars, and U.K. Mishra J. Appl. Phys. 107 2010 033509
10. S. Keller, B. Keller, D. Kapolnek, U. Mishra, S. DenBaars, I. Shmagin, R. Kolbas, and S. Krishnankutty J. Cryst. Growth 170 1997 349
11. K. Lorenz, N. Franco, E. Alves, S. Pereira, I. Watson, R. Martin, and K. ODonnell J. Cryst. Growth 310 2008 4058
12. F. Jiang, R.-V. Wang, A. Munkholm, S.K. Streiffer, G.B. Stephenson, P.H. Fuoss, K. Latifi, and C. Thompson Appl. Phys. Lett. 89 2006 161915
13. E.L. Piner, M.K. Behbehani, N.A. El-Masry, F.G. McIntosh, J.C. Roberts, K.S. Boutros, and S.M. Bedair Appl. Phys. Lett. 70 1997 461
14. T. Kehagias, G.P. Dimitrakopulos, J. Kioseoglou, H. Kirmse, C. Giesen, M. Heuken, A. Georgakilas, W. Neumann, T. Karakostas, and P. Komninou Appl. Phys. Lett. 95 2009 071905
15. C.R. Elsass, C. Poblenz, B. Heying, P. Fini, P.M. Petroff, S.P. DenBaars, U.K. Mishra, and J.S. Speck J. Cryst. Growth 233 2001 709
16. S. Keller, S. Heikman, I. Ben-Yaacov, L. Shen, S. DenBaars, and U. Mishra Appl. Phys. Lett. 79 2001 3449
17. D.D. Koleske, A.E. Wickenden, R.L. Henry, and M.E. Twigg J. Cryst. Growth 242 2002 55