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Volumn 108, Issue 9, 2010, Pages

Effect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition

(3) Won, Dongjin a Weng, Xiaojun a Redwing, Joan M a

a PENNSYLVANIA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DISLOCATION MOTION; EX SITU; GAN EPILAYERS; GAN FILM; HIGH-RESOLUTION X-RAY DIFFRACTION; HRXRD; IN-SITU; MEAN COMPRESSIVE STRESS; METALORGANIC CHEMICAL VAPOR DEPOSITION; MISFIT STRAIN ENERGY; MOLAR FLOW RATES; NUCLEATION AND GROWTH MODEL; RICH CONDITIONS; ROCKING CURVES; STEP-FLOW GROWTH; THREADING DISLOCATION; TRIMETHYLINDIUM; V-DEFECTS; WAFER CURVATURE MEASUREMENT;

ATOMIC FORCE MICROSCOPY; DEFECT DENSITY; EPILAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RESIDUAL STRESSES; SILICON CARBIDE; STRESS MEASUREMENT; STRESS RELAXATION; SURFACE ACTIVE AGENTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

DEFECTS;

EID: 78649311856 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3487955 Document Type: Article

Times cited : (37)

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