Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

Applied Physics Letters

Volumn 95, Issue 2, 2009, Pages

  Sahonta, S L ^a,b   Dimitrakopulos, G P ^b   Kehagias, Th ^b   Kioseoglou, J ^b   Adikimenakis, A ^c,d   Iliopoulos, E ^c,d   Georgakilas, A ^c,d   Kirmse, H ^e   Neumann, W ^e   Komninou, Ph ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c UNIVERSITY OF CRETE   (Greece)

^d INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

^e HUMBOLDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION GRADIENT; COMPOSITIONAL MODULATION; CRYSTALLINE FILMS; INDIUM ADATOMS; INDIUM CONCENTRATION; INDIUM CONTENT; POTENTIAL MINIMA;

BLOOD SUBSTITUTES; COALESCENCE; CRYSTAL GROWTH; GALLIUM NITRIDE; GROWTH KINETICS; INDIUM; LATTICE MISMATCH; MODULATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PLATELETS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; TENSILE STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL FILMS;

EID: 67650721449     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3184593     Document Type: Article

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