TEM and XANES study of MOVPE grown InAIN layers with different indium content

Journal of Physics: Conference Series

Volumn 326, Issue 1, 2011, Pages

  Kret, S ^a   Wolska, A ^a   Klepka, M T ^a   Letrouit, A ^a   Ivaldi, F ^a   Szczepanska A ^a   Carlin, J F ^b   Kaufmann, N A K ^b   Grandjean, N ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM; ORGANOMETALLICS; PHASE SEPARATION; SYNCHROTRON RADIATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY ABSORPTION; X RAY ABSORPTION NEAR EDGE STRUCTURE SPECTROSCOPY;

COMPOSITION STUDY; CRITICAL COMPOSITION; GROWTH CONDITIONS; METAL-ORGANIC VAPOR PHASE EPITAXY; SOLUBILITY LIMITS; SPATIALLY RESOLVED; TEM (TRANSMISSION ELECTRON MICROSCOPY); X RAY ABSORPTION NEAR EDGE STRUCTURE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 82955251148     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/326/1/012013     Document Type: Conference Paper

References (3)

1. Matsuoka T 1997 Appl. Phys. Lett. 71 105
2. Zhou L, Smith DJ, McCartney MR, Katzer DS and Storm DF 2007 Appl. Phys. Lett. 90 081917
3. Sahonta SL, Dimitrakopulos GP, Kehagias T, Kioseoglou J, Adikimenakis A, Iliopoulos E, Georgakilas A, Kirmse H, Neumann W and Komninou P 2009 Appl. Phys. Lett. 95 021913