Novel oxide-passivated AlGaN/GaN HEMT by using hydrogen peroxide treatment

IEEE Transactions on Electron Devices

Volumn 58, Issue 12, 2011, Pages 4430-4433

  Liu, Han Yin ^a   Chou, Bo Yi ^a   Hsu, Wei Chou ^a   Lee, Ching Sung ^b   Ho, Chiu Sheng ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

AlGaN GaN high electron mobility transistor (HEMT); H2O2 treatment; surface passivation

Indexed keywords

ALGAN; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BARRIER LAYERS; ELECTRON SPECTROSCOPY FOR CHEMICAL ANALYSIS; EXTRINSIC TRANSCONDUCTANCE; H2O2 TREATMENT; HYDROGEN PEROXIDE TREATMENT; MAXIMUM OSCILLATION FREQUENCY; SATURATION CURRENT DENSITIES; SURFACE OXIDE; SURFACE PASSIVATION; ZERO GATE;

CHEMICAL ANALYSIS; CUTOFF FREQUENCY; ELECTRON MOBILITY; ELECTRON SPECTROSCOPY; ELECTRONS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HYDROGEN; HYDROGEN PEROXIDE; OXIDATION; PASSIVATION; SURFACE TREATMENT; TRANSMISSION ELECTRON MICROSCOPY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 82155162452     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2167512     Document Type: Article

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