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Semiconductor Science and Technology

Volumn 27, Issue 6, 2012, Pages

Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique

(7) Lee, Ching Sung a Hung, Chun Tse a Chou, Bo Yi b Hsu, Wei Chou b Liu, Han Yin b Ho, Chiu Sheng b Lai, Ying Nan b

a FENG CHIA UNIVERSITY (Taiwan)

b NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE STUDIES; DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; GATE STRUCTURE; HIGH FREQUENCY CHARACTERISTICS; INSULATING PROPERTIES; METAL OXIDE SEMICONDUCTOR; POWER PERFORMANCE; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; TEMPERATURE DEPENDENT; WATER OXIDATION;

GALLIUM; OZONE; PASSIVATION;

WATER TREATMENT;

EID: 84860785737 PISSN: 02681242 EISSN: 13616641 Source Type: Journal
DOI: 10.1088/0268-1242/27/6/065006 Document Type: Article

Times cited : (14)

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